Flexible MgO Barrier Magnetic Tunnel Junctions

Li Ming Loong; Wonho Lee; Xuepeng Qiu; Ping Yang; Hiroyo Kawai; Mark Saeys; Jong-Hyun Ahn; Hyunsoo Yang

doi:10.1002/adma.201600062

Flexible MgO Barrier Magnetic Tunnel Junctions

Adv Mater. 2016 Jul;28(25):4983-90. doi: 10.1002/adma.201600062. Epub 2016 Apr 27.

Authors

Li Ming Loong¹, Wonho Lee², Xuepeng Qiu¹, Ping Yang³, Hiroyo Kawai⁴, Mark Saeys⁵, Jong-Hyun Ahn², Hyunsoo Yang¹

Affiliations

¹ Department of Electrical and Computer Engineering, NUSNNI, National University of Singapore, Singapore, 117576, Singapore.
² School of Electrical and Electronic Engineering, Yonsei University, Seoul, 03722, Korea.
³ Singapore Synchrotron Light Source, National University of Singapore, 5 Research Link, Singapore, 117603, Singapore.
⁴ Institute of Materials Research and Engineering, 3 Research Link, Singapore, 117602, Singapore.
⁵ Laboratory for Chemical Technology, Ghent University, Technologiepark 914, 9052, Ghent, Belgium.

PMID: 27119207
DOI: 10.1002/adma.201600062

Abstract

Flexible MgO barrier magnetic tunnel junction (MTJ) devices are fabricated using a transfer printing process. The flexible MTJ devices yield significantly enhanced tunneling magnetoresistance of ≈300% and improved abruptness of switching, as residual strain in the MTJ structure is released during the transfer process. This approach could be useful for flexible electronic systems that require high-performance memory components.

Keywords: flexible electronics; magnetic tunnel junctions; spintronics; strain engineering; tunneling magnetoresistance.