Interface Properties of Atomic-Layer-Deposited Al2O3 Thin Films on Ultraviolet/Ozone-Treated Multilayer MoS2 Crystals

Seonyoung Park; Seong Yeoul Kim; Yura Choi; Myungjun Kim; Hyunjung Shin; Jiyoung Kim; Woong Choi

doi:10.1021/acsami.6b01568

Interface Properties of Atomic-Layer-Deposited Al2O3 Thin Films on Ultraviolet/Ozone-Treated Multilayer MoS2 Crystals

ACS Appl Mater Interfaces. 2016 May 11;8(18):11189-93. doi: 10.1021/acsami.6b01568. Epub 2016 Apr 28.

Authors

Seonyoung Park¹, Seong Yeoul Kim¹, Yura Choi¹, Myungjun Kim², Hyunjung Shin², Jiyoung Kim³, Woong Choi¹

Affiliations

¹ School of Advanced Materials Engineering, Kookmin University , Seoul 02707, Korea.
² Department of Energy Science, Sungkyunkwan University , Suwon 16419, Korea.
³ Department of Materials Science and Engineering, University of Texas at Dallas , Richardson, Texas 75080, United States.

PMID: 27117229
DOI: 10.1021/acsami.6b01568

Abstract

We report the interface properties of atomic-layer-deposited Al2O3 thin films on ultraviolet/ozone (UV/O3)-treated multilayer MoS2 crystals. The formation of S-O bonds on MoS2 after low-power UV/O3 treatment increased the surface energy, allowing the subsequent deposition of uniform Al2O3 thin films. The capacitance-voltage measurement of Au-Al2O3-MoS2 metal oxide semiconductor capacitors indicated n-type MoS2 with an electron density of ∼10(17) cm(-3) and a minimum interface trap density of ∼10(11) cm(-2) eV(-1). These results demonstrate the possibility of forming a high-quality Al2O3-MoS2 interface by proper UV/O3 treatment, providing important implications for their integration into field-effect transistors.

Keywords: Al2O3; MoS2; atomic layer deposition; capacitance−voltage; interface property; ultraviolet/ozone treatment.

Publication types

Research Support, Non-U.S. Gov't