A High-Performance WSe2 /h-BN Photodetector using a Triphenylphosphine (PPh3 )-Based n-Doping Technique

Seo-Hyeon Jo; Dong-Ho Kang; Jaewoo Shim; Jaeho Jeon; Min Hwan Jeon; Gwangwe Yoo; Jinok Kim; Jaehyeong Lee; Geun Young Yeom; Sungjoo Lee; Hyun-Yong Yu; Changhwan Choi; Jin-Hong Park

doi:10.1002/adma.201600032

A High-Performance WSe2 /h-BN Photodetector using a Triphenylphosphine (PPh3 )-Based n-Doping Technique

Adv Mater. 2016 Jun;28(24):4824-31. doi: 10.1002/adma.201600032. Epub 2016 Apr 23.

Authors

Affiliations

¹ School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon, 440-746, South Korea.
² SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 440-746, South Korea.
³ School of Electrical Engineering, Korea University, Seoul, 136-701, South Korea.
⁴ Division of Materials Science and Engineering, Hanyang University, Seoul, 133-791, South Korea.

PMID: 27106134
DOI: 10.1002/adma.201600032

Abstract

The effects of triphenylphosphine (PPh3 )-based n-doping and hexagonal boron nitride (h-BN) insertion on a tungsten diselenide (WSe2 ) photodetector are systematically studied, and a very high performance WSe2 /h-BN heterostucture-based photodetector is demonstrated with a record photoresponsivity (1.27 × 10(6) A W(-1) ) and temporal photoresponse (rise time: 2.8 ms, decay time: 20.8 ms) under 520 nm wavelength and 5 pW power laser illumination.

Keywords: PPh3; WSe2; nondegenerate doping; photodetectors; type-converted FET.