Negative thermal expansion and broad band photoluminescence in a novel material of ZrScMo2VO12

Xianghong Ge; Yanchao Mao; Xiansheng Liu; Yongguang Cheng; Baohe Yuan; Mingju Chao; Erjun Liang

doi:10.1038/srep24832

Negative thermal expansion and broad band photoluminescence in a novel material of ZrScMo2VO12

Sci Rep. 2016 Apr 21:6:24832. doi: 10.1038/srep24832.

Authors

Xianghong Ge^{1

2}, Yanchao Mao¹, Xiansheng Liu³, Yongguang Cheng¹, Baohe Yuan¹, Mingju Chao¹, Erjun Liang¹

Affiliations

¹ College of Physical Science and Engineering &Key Laboratory of Materials Physics of Ministry of Education of China, Zhengzhou University, Zhengzhou 450052, China.
² Zhongyuan University of Technology, College of Science, Zhengzhou 450007, China.
³ Key Laboratory of Photovoltaic Materials of Henan Province and School of Physics &Electronic, Henan University, Kaifeng 475004, China.

Abstract

In this paper, we present a novel material with the formula of ZrScMo2VO12 for the first time. It was demonstrated that this material exhibits not only excellent negative thermal expansion (NTE) property over a wide temperature range (at least from 150 to 823 K), but also very intense photoluminescence covering the entire visible region. Structure analysis shows that ZrScMo2VO12 has an orthorhombic structure with the space group Pbcn (No. 60) at room temperature. A phase transition from monoclinic to orthorhombic structure between 70 and 90 K is also revealed. The intense white light emission is tentatively attributed to the n- and p-type like co-doping effect which creates not only the donor- and acceptor-like states in the band gap, but also donor-acceptor pairs and even bound exciton complexes. The excellent NTE property integrated with the intense white-light emission implies a potential application of this material in light emitting diode and other photoelectric devices.

Publication types

Research Support, Non-U.S. Gov't