Double-Sided Junctions Enable High-Performance Colloidal-Quantum-Dot Photovoltaics

Mengxia Liu; F Pelayo García de Arquer; Yiying Li; Xinzheng Lan; Gi-Hwan Kim; Oleksandr Voznyy; Lethy Krishnan Jagadamma; Abdullah Saud Abbas; Sjoerd Hoogland; Zhenghong Lu; Jin Young Kim; Aram Amassian; Edward H Sargent

doi:10.1002/adma.201506213

Double-Sided Junctions Enable High-Performance Colloidal-Quantum-Dot Photovoltaics

Adv Mater. 2016 Jun;28(21):4142-8. doi: 10.1002/adma.201506213. Epub 2016 Apr 1.

Affiliations

¹ Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada.
² Department of Materials Science and Engineering, University of Toronto, 184 College Street, Toronto, Ontario, M5S 3E4, Canada.
³ School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 689-798, South Korea.
⁴ King Abdullah University of Science and Technology (KAUST), Solar and Photovoltaic Engineering Research Center (SPERC) and Physical Sciences and Engineering Division, 4700 KAUST, Thuwal, 23955-6900, Saudi Arabia.

PMID: 27038256
DOI: 10.1002/adma.201506213

Abstract

The latest advances in colloidal-quantum-dot material processing are combined with a double-sided junction architecture, which is done by efficiently incorporating indium ions in the ZnO eletrode. This platform allows the collection of all photogenerated carriers even at the maximum power point. The increased depletion width in the device facilitates full carrier collection, leading to a record 10.8% power conversion efficiency.

Keywords: In-doped ZnO; charge extraction; colloidal quantum dots; solar cells.