Low-Voltage Complementary Electronics from Ion-Gel-Gated Vertical Van der Waals Heterostructures

Yongsuk Choi; Junmo Kang; Deep Jariwala; Moon Sung Kang; Tobin J Marks; Mark C Hersam; Jeong Ho Cho

doi:10.1002/adma.201506450

Low-Voltage Complementary Electronics from Ion-Gel-Gated Vertical Van der Waals Heterostructures

Adv Mater. 2016 May;28(19):3742-8. doi: 10.1002/adma.201506450. Epub 2016 Mar 22.

Authors

Yongsuk Choi^{1

2}, Junmo Kang², Deep Jariwala², Moon Sung Kang³, Tobin J Marks^{2

4}, Mark C Hersam^{2

4

5}, Jeong Ho Cho^{1

2

6}

Affiliations

¹ SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 440-746, Korea.
² Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA.
³ Department of Chemical Engineering, Soongsil University, Seoul, 156-743, Korea.
⁴ Department of Chemistry, Northwestern University, Evanston, IL, 60208, USA.
⁵ Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, IL, 60208, USA.
⁶ School of Chemical Engineering, Sungkyunkwan University, Suwon, 440-746, Korea.

PMID: 27002478
DOI: 10.1002/adma.201506450

Abstract

Low-voltage complementary circuits comprising n-type and p-type van der Waals heterojunction vertical field-effect transistors (VFETs) are demonstrated. The resulting VFETs possess high on-state current densities (>3000 A cm(-2) ) and on/off current ratios (>10(4) ) in a narrow voltage window (<3 V).

Keywords: Schottky barrier; graphene; ion gels; low power; transition-metal dichalcogenides; vertical transistors.