In situ synthesis of Bi2S3 sensitized WO3 nanoplate arrays with less interfacial defects and enhanced photoelectrochemical performance

Canjun Liu; Yahui Yang; Wenzhang Li; Jie Li; Yaomin Li; Qiyuan Chen

doi:10.1038/srep23451

In situ synthesis of Bi2S3 sensitized WO3 nanoplate arrays with less interfacial defects and enhanced photoelectrochemical performance

Sci Rep. 2016 Mar 18:6:23451. doi: 10.1038/srep23451.

Authors

Canjun Liu¹, Yahui Yang², Wenzhang Li¹, Jie Li¹, Yaomin Li³, Qiyuan Chen¹

Affiliations

¹ School of Chemistry and Chemical Engineering, Central South University, Changsha 410083, China.
² College of Resources and Environment, Hunan Agricultural University, Changsha 410128, China.
³ Department of Chemistry, University College London, 20 Gordon Street, London, WC1H 0AJ, UK.

Abstract

In this study, Bi2S3 sensitive layer has been grown on the surface of WO3 nanoplate arrays via an in situ approach. The characterization of samples were carried out using scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD) and ultraviolet-visible absorption spectroscopy (UV-vis). The results show that the Bi2S3 layer is uniformly formed on the surface of WO3 nanoplates and less interfacial defects were observed in the interface between the Bi2S3 and WO3. More importantly, the Bi2S3/WO3 films as photoanodes for photoelectrochemical (PEC) cells display the enhanced PEC performance compared with the Bi2S3/WO3 films prepared by a sequential ionic layer adsorption reaction (SILAR) method. In order to understand the reason for the enhanced PEC properties, the electron transport properties of the photoelectrodes were studied by using the transient photocurrent spectroscopy and intensity modulated photocurrent spectroscopy (IMPS). The Bi2S3/WO3 films prepared via an in situ approach have a greater transient time constant and higher electron transit rate. This is most likely due to less interfacial defects for the Bi2S3/WO3 films prepared via an in situ approach, resulting in a lower resistance and faster carrier transport in the interface between WO3 and Bi2S3.

Publication types

Research Support, Non-U.S. Gov't