Microstructural properties of Cu2ZnSn(S(x)Se(1-x))4 kesterite solid solutions were investigated using grazing incidence X-ray diffraction for the full interval of anion compositions in order to explore the influence of S and Se atoms on the thin film morphology. Thin films were prepared by sputtering deposition of metallic precursors, which were then submitted to a high temperature sulfo-selenization process. By adjusting process parameters samples from sulfur- to selenium-pure (0 ≤ x ≤ 1) were made. Microstructural analysis shows a strong dependence of domain size and microstrain on composition. Both values increase with higher sulfur content, and depth profile analysis by grazing incidence X-ray diffraction shows selenium-rich films tend to have a more homogeneous depth distribution of domain size. The increasing trend in domain size of S-rich absorbers can be related to lower formation energies of the sulfur binary phases leading to formation of kesterites, while the increase in the microstrain is explained by the substitution of larger Se atoms with smaller S atoms in the host lattice and the presence of secondary phases.