Microscale Soft Patterning for Solution Processable Metal Oxide Thin Film Transistors

Sang Wook Jung; Soo Sang Chae; Jee Ho Park; Jin Young Oh; Suk Ho Bhang; Hong Koo Baik; Tae Il Lee

doi:10.1021/acsami.5b10847

Microscale Soft Patterning for Solution Processable Metal Oxide Thin Film Transistors

ACS Appl Mater Interfaces. 2016 Mar 23;8(11):7205-11. doi: 10.1021/acsami.5b10847. Epub 2016 Mar 8.

Authors

Sang Wook Jung^{1

2}, Soo Sang Chae¹, Jee Ho Park¹, Jin Young Oh¹, Suk Ho Bhang³, Hong Koo Baik¹, Tae Il Lee⁴

Affiliations

¹ Department of Materials Science and Engineering, Yonsei University , 134 Shinchong-dong, Seoul 120-750, South Korea.
² Samsung Display Co. Ltd. , Tangjeong, Chuncheongnam-Do 336-741, South Korea.
³ School of Chemical Engineering, Sungkyunkwan University , 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do South Korea.
⁴ Department of BioNano Technology, Gachon University , Seongnam, Gyeonggi-Do 461-701, South Korea.

PMID: 26919321
DOI: 10.1021/acsami.5b10847

Abstract

We introduce a microscale soft pattering (MSP) route utilizing contact printing of chemically inert sub-nanometer thick low molecular weight (LMW) poly(dimethylsiloxane) (PDMS) layers. These PDMS layers serve as a release agent layer between the n-type Ohmic metal and metal oxide semiconductors (MOSs) and provide a layer that protects the MOS from water in the surrounding environment. The feasibility of our MSP route was experimentally demonstrated by fabricating solution processable In2O3, IZO, and IGZO TFTs with aluminum (Al), a typical n-type Ohmic metal. We have demonstrated patterning gaps as small as 13 μm. The TFTs fabricated using MSP showed higher field-effect-mobility and lower hysteresis in comparison with those made using conventional photolithography.

Keywords: contact printing; metal oxide semiconductor; metal patterning; soft-lithography; thin film transistor.

Publication types

Research Support, Non-U.S. Gov't