High Q factor InP photonic crystal nanobeam cavities on silicon wire waveguides

Opt Lett. 2016 Feb 1;41(3):579-82. doi: 10.1364/OL.41.000579.

Abstract

High-quality (Q) factor indium phosphide (InP)-based 1D photonic crystal nanobeam cavities are fabricated on silicon on insulator waveguides. Through the optimization of the fabrication process, the intrinsic Q factor of these fully encapsulated nanocavities is demonstrated to attain values higher than 100,000. Experimental and numerical investigations are carried out on the impact, on the Q factor, of the strength of the evanescent wave coupling between the cavity and the waveguide. We reveal that this coupling can result in a modification of the electromagnetic field distribution in the resonant mode, which gives rise up to a factor 4 reduction in the intrinsic Q factor for the structures under study.

Publication types

  • Research Support, Non-U.S. Gov't