Comment on "Metal Semiconductor Field-Effect Transistor with MoS₂/Conducting NiOx van der Waals Schottky Interface for Intrinsic High Mobility and Photoswitching Speed"

ACS Nano. 2016 Feb 23;10(2):1714-5. doi: 10.1021/acsnano.5b07083. Epub 2016 Feb 4.

Authors

Zhenyu Yang¹, Jingli Wang¹, Lei Liao¹

Affiliation

¹ Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University , Wuhan 430072, China.

PMID: 26844951
DOI: 10.1021/acsnano.5b07083

No abstract available

Publication types

Comment
Letter