Compensating the Degradation of Near-Infrared Absorption of Black Silicon Caused by Thermal Annealing

Yanchao Wang; Jinsong Gao; Haigui Yang; Xiaoyi Wang; Zhenfeng Shen

doi:10.1186/s11671-016-1281-4

Compensating the Degradation of Near-Infrared Absorption of Black Silicon Caused by Thermal Annealing

Nanoscale Res Lett. 2016 Dec;11(1):56. doi: 10.1186/s11671-016-1281-4. Epub 2016 Feb 1.

Authors

Yanchao Wang¹, Jinsong Gao^{1

2}, Haigui Yang³, Xiaoyi Wang², Zhenfeng Shen²

Affiliations

¹ University of the Chinese Academy of Sciences, Beijing, 100039, China.
² Key Laboratory of Optical System Advanced Manufacturing Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, China.
³ Key Laboratory of Optical System Advanced Manufacturing Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, China. yanghg@ciomp.ac.cn.

Abstract

We propose the use of thin Ag film deposition to remedy the degradation of near-infrared (NIR) absorption of black Si caused by high-temperature thermal annealing. A large amount of random and irregular Ag nanoparticles are formed on the microstructural surface of black Si after Ag film deposition, which compensates the degradation of NIR absorption of black Si caused by thermal annealing. The formation of Ag nanoparticles and their contributions to NIR absorption of black Si are discussed in detail.

Keywords: Ag nanoparticles; Infrared absorption; Microstructured silicon; Thermal annealing.