Facet-Mediated Growth of High-Quality Monolayer Graphene on Arbitrarily Rough Copper Surfaces

Hyo Chan Lee; Sae Byeok Jo; Eunho Lee; Min Seok Yoo; Hyun Ho Kim; Seong Kyu Lee; Wi Hyoung Lee; Kilwon Cho

doi:10.1002/adma.201504190

Facet-Mediated Growth of High-Quality Monolayer Graphene on Arbitrarily Rough Copper Surfaces

Adv Mater. 2016 Mar 9;28(10):2010-7. doi: 10.1002/adma.201504190. Epub 2016 Jan 14.

Authors

Hyo Chan Lee¹, Sae Byeok Jo¹, Eunho Lee¹, Min Seok Yoo¹, Hyun Ho Kim¹, Seong Kyu Lee¹, Wi Hyoung Lee², Kilwon Cho¹

Affiliations

¹ Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, 790-784, South Korea.
² Department of Organic and Nano System Engineering, Konkuk University, Seoul, 143-701, South Korea.

PMID: 26766210
DOI: 10.1002/adma.201504190

Abstract

A synthetic approach for high-quality graphene on rough Cu surfaces via chemical vapor deposition is proposed. High-quality graphene is synthesized on rough Cu surfaces by inducing surface faceting of Cu surfaces prior to graphene growth. The electron mobility of synthesized graphene on the rough Cu surfaces is enhanced to 10 335 cm(2) V(-1) s(-1).

Keywords: chemical vapor deposition; copper surfaces; faceting; graphene.