High-Mobility Transistors Based on Large-Area and Highly Crystalline CVD-Grown MoSe2 Films on Insulating Substrates

Adv Mater. 2016 Mar 23;28(12):2316-21. doi: 10.1002/adma.201504789. Epub 2016 Jan 11.

Abstract

Large-area and highly crystalline CVD-grown multilayer MoSe2 films exhibit a well-defined crystal structure (2H phase) and large grains reaching several hundred micrometers. Multilayer MoSe2 transistors exhibit high mobility up to 121 cm(2) V(-1) s(-1) and excellent mechanical stability. These results suggest that high mobility materials will be indispensable for various future applications such as high-resolution displays and human-centric soft electronics.

Keywords: MoSe2; insulating substrates; single-crystals; thin-film transistors; transition metal dichalcogenides.

Publication types

  • Research Support, Non-U.S. Gov't

MeSH terms

  • Crystallization
  • Microscopy, Electron, Scanning Transmission
  • Molybdenum / chemistry*
  • Photoelectron Spectroscopy
  • Selenium / chemistry*
  • Silicon Dioxide / chemistry
  • Transistors, Electronic*
  • X-Ray Diffraction

Substances

  • Silicon Dioxide
  • Molybdenum
  • Selenium