An ambipolar organic field-effect transistor based on an AIE-active single crystal with a high mobility level of 2.0 cm(2) V(-1) s(-1)

Jian Deng; Yuanxiang Xu; Liqun Liu; Cunfang Feng; Jia Tang; Yu Gao; Yan Wang; Bing Yang; Ping Lu; Wensheng Yang; Yuguang Ma

doi:10.1039/c5cc09702a

An ambipolar organic field-effect transistor based on an AIE-active single crystal with a high mobility level of 2.0 cm(2) V(-1) s(-1)

Chem Commun (Camb). 2016 Feb 7;52(11):2370-3. doi: 10.1039/c5cc09702a.

Authors

Jian Deng¹, Yuanxiang Xu¹, Liqun Liu¹, Cunfang Feng¹, Jia Tang¹, Yu Gao¹, Yan Wang¹, Bing Yang¹, Ping Lu¹, Wensheng Yang¹, Yuguang Ma²

Affiliations

¹ State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, P. R. China.
² State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, P. R. China and State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, P. R. China. wangy2011@jlu.edu.cn ygma@jlu.edu.cn.

PMID: 26730680
DOI: 10.1039/c5cc09702a

Abstract

Organic field-effect transistors (OFETs) based on an aggregation-induced emission (AIE) material were fabricated using a calcium-gold asymmetric electrode system. The devices showed very high and balanced mobility, reaching 2.50 and 2.10 cm(2) V(-1) s(-1), respectively, for electron and hole. Strong green electroluminescence from the single-crystal side edge was observed from all the devices. This work demonstrates that AIE active materials could not only achieve high luminescence, but also be used in light emitting transistors and achieve very high mobility.

Publication types

Research Support, Non-U.S. Gov't