Correction: Direct synthesis of large-scale hierarchical MoS2 films nanostructured with orthogonally oriented vertically and horizontally aligned layers
Nanoscale. 2016 Jan 28;8(4):2445.
doi: 10.1039/c5nr90233a.
1 Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai 201800, China. jwang@siom.ac.cn.
2 State Key Laboratory of Advanced Optical Communication Systems and Networks, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, China.
3 Department of Materials Science, Fudan University, Shanghai 200433, China.
4 Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai 201800, China. jwang@siom.ac.cn and State Key Laboratory of High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China.
Correction for 'Direct synthesis of large-scale hierarchical MoS2 films nanostructured with orthogonally oriented vertically and horizontally aligned layers' by Xiaoyan Zhang et al., Nanoscale, 2016, DOI: 10.1039/c5nr05938k.