Quantitative Analysis of Scattering Mechanisms in Highly Crystalline CVD MoS2 through a Self-Limited Growth Strategy by Interface Engineering

Xi Wan; Kun Chen; Weiguang Xie; Jinxiu Wen; Huanjun Chen; Jian-Bin Xu

doi:10.1002/smll.201502392

Quantitative Analysis of Scattering Mechanisms in Highly Crystalline CVD MoS2 through a Self-Limited Growth Strategy by Interface Engineering

Small. 2016 Jan 27;12(4):438-45. doi: 10.1002/smll.201502392. Epub 2015 Dec 10.

Authors

Xi Wan¹, Kun Chen¹, Weiguang Xie², Jinxiu Wen³, Huanjun Chen³, Jian-Bin Xu¹

Affiliations

¹ Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Shatin, N. T., Hong Kong SAR, 999077, P. R. China.
² Siyuan Laboratory, Department of Physics, Jinan University, Guangzhou, Guangdong, 510632, P. R. China.
³ School of Physics and Engineering, Sun Yat-Sen University, Guangzhou, Guangdong, 510275, P. R. China.

PMID: 26663902
DOI: 10.1002/smll.201502392

Abstract

The electrical performance of highly crystalline monolayer MoS2 is remarkably enhanced by a self-limited growth strategy on octadecyltrimethoxysilane self-assembled monolayer modified SiO2 /Si substrates. The scattering mechanisms in low-κ dielectric, including the dominant charged impurities, acoustic deformation potentials, optical deformation potentials), Fröhlich interaction, and the remote interface phonon interaction in dielectrics, are quantitatively analyzed.

Keywords: MoS2; OTMS; charged impurities; scattering; self-limited growth.

Publication types

Research Support, Non-U.S. Gov't