Large Spin-Valley Polarization in Monolayer MoTe2 on Top of EuO(111)

Qingyun Zhang; Shengyuan A Yang; Wenbo Mi; Yingchun Cheng; Udo Schwingenschlögl

doi:10.1002/adma.201502585

Large Spin-Valley Polarization in Monolayer MoTe2 on Top of EuO(111)

Adv Mater. 2016 Feb 3;28(5):959-66. doi: 10.1002/adma.201502585. Epub 2015 Dec 7.

Authors

Qingyun Zhang¹, Shengyuan A Yang², Wenbo Mi³, Yingchun Cheng⁴, Udo Schwingenschlögl¹

Affiliations

¹ PSE Division, KAUST, Thuwal, 23955-6900, Kingdom of Saudi Arabia.
² Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore, 487372, Singapore.
³ Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Institute of Advanced Materials Physics, Faculty of Science, Tianjin University, Tianjin, 300072, P. R. China.
⁴ Institute of Advanced Materials, Nanjing Tech University, Nanjing, 211816, P. R. China.

PMID: 26639918
DOI: 10.1002/adma.201502585

Abstract

The electronic properties of monolayer MoTe2 on top of EuO(111) are studied by first-principles calculations. Strong spin polarization is induced in MoTe2 , which results in a large valley polarization. In a longitudinal electric field this will result in a valley and spin-polarized charge Hall effect. The direction of the Hall current as well as the valley and spin polarizations can be tuned by an external magnetic field.