Large Enhancement of Carrier Transport in Solution-Processed Field-Effect Transistors by Fluorinated Dielectric Engineering

Dongyoon Khim; Yong Xu; Kang-Jun Baeg; Minji Kang; Won-Tae Park; Seung-Hoon Lee; In-Bok Kim; Juhwan Kim; Dong-Yu Kim; Chuan Liu; Yong-Young Noh

doi:10.1002/adma.201501967

Large Enhancement of Carrier Transport in Solution-Processed Field-Effect Transistors by Fluorinated Dielectric Engineering

Adv Mater. 2016 Jan 20;28(3):518-26. doi: 10.1002/adma.201501967. Epub 2015 Nov 25.

Authors

Affiliations

¹ Department of Energy and Materials Engineering, Dongguk University, 26 Pil-dong, 3-ga, Jung-gu Seoul, 100-715, Republic of Korea.
² Department of Graphic Arts Information Engineering, College of Engineering Pukyung National University, 365 Sinseon-ro, Nam-gu Busan, 48547, Republic of Korea.
³ Heeger Center for Advanced Materials, School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu Gwangju, 61005, Republic of Korea.
⁴ State Key Laboratory of Optoelectronic Materials and Technologies Guangdong Province Key Laboratory of Display Material and Technology School of Microelectronics, Shunde International Joint Research Institute (SYSU-CMU JRI), Sun Yat-sen University, Guangzhou, 510275, P. R. China.

PMID: 26603608
DOI: 10.1002/adma.201501967

Abstract

The universal role of high-k fluorinated dielectrics in assisting the carrier transport in transistors for a broad range of printable semiconductors is explored. These results present general rules for how to design dielectric materials and achieve devices with a high carrier concentration, low disorder, reliable operation, and robust properties.

Keywords: ambipolar transport; conjugated polymers; fluorinated high-k polymer dielectrics; organic field-effect transistors.