Doping-Induced Carrier Density Modulation in Polymer Field-Effect Transistors

Byoung Hoon Lee; Guillermo C Bazan; Alan J Heeger

doi:10.1002/adma.201504307

Doping-Induced Carrier Density Modulation in Polymer Field-Effect Transistors

Adv Mater. 2016 Jan 6;28(1):57-62. doi: 10.1002/adma.201504307. Epub 2015 Nov 20.

Authors

Byoung Hoon Lee¹, Guillermo C Bazan¹, Alan J Heeger¹

Affiliation

¹ Center for Polymers and Organic Solids, University of California Santa Barbara, Santa Barbara, CA, 93106, USA.

PMID: 26585873
DOI: 10.1002/adma.201504307

Abstract

Controlled device parameters of high-mobility polymer field-effect transistors (FETs) are demonstrated by modest doping and charge compensation. Through fleeting chemical vapor treatments of aligned poly[4-(4,4-dihexadecyl-4H-cyclopenta[1,2-b:5,4-b']dithiophen-2-yl)-alt-[1,2,5]thiadiazolo-[3,4-c]pyridine] (PCDTPT) thin films as the charge transport layer in the FET channel, the FET properties are tailored by controlling doping concentration of the PCDTPT adjacent to metal electrodes.

Keywords: contact resistance; linear mobility; organic electronics; polymer field-effect transistors; threshold voltage.