Ambipolar Organic Tri-Gate Transistor for Low-Power Complementary Electronics

Fabrizio Torricelli; Matteo Ghittorelli; Edsger C P Smits; Christian W S Roelofs; René A J Janssen; Gerwin H Gelinck; Zsolt M Kovács-Vajna; Eugenio Cantatore

doi:10.1002/adma.201503414

Ambipolar Organic Tri-Gate Transistor for Low-Power Complementary Electronics

Adv Mater. 2016 Jan 13;28(2):284-90. doi: 10.1002/adma.201503414. Epub 2015 Nov 17.

Authors

Fabrizio Torricelli^{1

2}, Matteo Ghittorelli¹, Edsger C P Smits³, Christian W S Roelofs^{2

4}, René A J Janssen², Gerwin H Gelinck^{2

3}, Zsolt M Kovács-Vajna¹, Eugenio Cantatore²

Affiliations

¹ Department of Information Engineering, University of Brescia, via Branze 38, 25123, Brescia, Italy.
² Department of Electrical Engineering, Eindhoven University of Technology, P.O. Box 513, 5600, MB, Eindhoven, The Netherlands.
³ TNO/Holst Centre, High Tech Campus 4, 5656, AE, Eindhoven, The Netherlands.
⁴ Philips Research Laboratories, High Tech Campus 4, 5656, AE, Eindhoven, The Netherlands.

PMID: 26573767
DOI: 10.1002/adma.201503414

Abstract

Ambipolar transistors typically suffer from large off-current inherently due to ambipolar conduction. Using a tri-gate transistor it is shown that it is possible to electrostatically switch ambipolar polymer transistors from ambipolar to unipolar mode. In unipolar mode, symmetric characteristics with an on/off current ratio of larger than 10(5) are obtained. This enables easy integration into low-power complementary logic and volatile electronic memories.

Keywords: ambipolar semiconductors; complementary electronics, electronic memory; polymer transistors.