Site Selective Doping of Ultrathin Metal Dichalcogenides by Laser-Assisted Reaction

Eunpa Kim; Changhyun Ko; Kyunghoon Kim; Yabin Chen; Joonki Suh; Sang-Gil Ryu; Kedi Wu; Xiuqing Meng; Aslihan Suslu; Sefaattin Tongay; Junqiao Wu; Costas P Grigoropoulos

doi:10.1002/adma.201503945

Site Selective Doping of Ultrathin Metal Dichalcogenides by Laser-Assisted Reaction

Adv Mater. 2016 Jan 13;28(2):341-6. doi: 10.1002/adma.201503945. Epub 2015 Nov 16.

Authors

Eunpa Kim¹, Changhyun Ko², Kyunghoon Kim³, Yabin Chen², Joonki Suh², Sang-Gil Ryu¹, Kedi Wu⁴, Xiuqing Meng^{2

4

5}, Aslihan Suslu⁴, Sefaattin Tongay⁴, Junqiao Wu^{2

6}, Costas P Grigoropoulos¹

Affiliations

¹ Laser Thermal Lab, Department of Mechanical Engineering, University of California, Berkeley, CA, 94720, USA.
² Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.
³ School of Mechanical Engineering, Sungkyunkwan University, Suwon, 440-746, South Korea.
⁴ School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, 85287, USA.
⁵ Research Center for Light Emitting Diodes (LED), Zhejiang Normal University, Jinhua, 321004, P. R. China.
⁶ Division of Materials Sciences and Engineering, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.

PMID: 26567761
DOI: 10.1002/adma.201503945

Abstract

Laser-assisted phosphorus doping is demonstrated on ultrathin transition-metal dichalcogenides (TMDCs) including n-type MoS2 and p-type WSe2 . Temporal and spatial control of the doping is achieved by varying the laser irradiation power and time, demonstrating wide tunability and high site selectivity with high stability. The laser-assisted doping method may enable a new avenue for functionalizing TMDCs for customized nanodevice applications.

Keywords: 2D materials; field-effect transistors; laser-assisted doping; site selective; transition metal dichalcogenide.