A Novel Alkylated Indacenodithieno[3,2-b]thiophene-Based Polymer for High-Performance Field-Effect Transistors

Weimin Zhang; Yang Han; Xiuxiu Zhu; Zhuping Fei; Yu Feng; Neil D Treat; Hendrik Faber; Natalie Stingelin; Iain McCulloch; Thomas D Anthopoulos; Martin Heeney

doi:10.1002/adma.201504092

A Novel Alkylated Indacenodithieno[3,2-b]thiophene-Based Polymer for High-Performance Field-Effect Transistors

Adv Mater. 2016 May;28(20):3922-7. doi: 10.1002/adma.201504092. Epub 2015 Oct 30.

Authors

Affiliations

¹ College of Chemistry and Chemical Engineering, Guangxi University for Nationalities, Nanning, 530006, P. R. China.
² Department of Chemistry and Centre for Plastic Electronics, Imperial College London, London, SW7 2AZ, UK.
³ Department of Physics and Centre for Plastic Electronics, Imperial College London, London, SW7 2AZ, UK.
⁴ Department of Materials and Centre for Plastic Electronics, Imperial College London, London, SW7 2AZ, UK.

PMID: 26514111
DOI: 10.1002/adma.201504092

Abstract

A novel rigid donor monomer, indacenodithieno[3,2-b]thiophene (IDTT), containing linear alkyl chains, is reported. Its copolymer with benzothiadiazole is an excellent p-type semiconductor, affording a mobility of 6.6 cm(2) V(-1) s(-1) in top-gated field-effect transistors with pentafluorobenzenethiol-modified Au electrodes. Electrode treatment with solution-deposited copper(I) thiocyanate (CuSCN) has a beneficial hole-injection/electron-blocking effect, further enhancing the mobility to 8.7 cm(2) V(-1) s(-1) .

Keywords: conjugated polymers; interfacial layers; organic semiconductors; organic thin-film transistors.

Publication types

Research Support, Non-U.S. Gov't