Tuning Band Alignment Using Interface Dipoles at the Pt/Anatase TiO₂ Interface

Takashi Tachikawa; Makoto Minohara; Yasuyuki Hikita; Christopher Bell; Harold Y Hwang

doi:10.1002/adma.201503339

Tuning Band Alignment Using Interface Dipoles at the Pt/Anatase TiO₂ Interface

Adv Mater. 2015 Dec 2;27(45):7458-61. doi: 10.1002/adma.201503339. Epub 2015 Oct 27.

Authors

Takashi Tachikawa^{1

2}, Makoto Minohara³, Yasuyuki Hikita¹, Christopher Bell⁴, Harold Y Hwang^{1

5}

Affiliations

¹ Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, CA, 94025, USA.
² Department of Advanced Materials Science, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba, 277-8561, Japan.
³ Photon Factory, Institute of Materials Structure Science, High Energy Accelerator Research Organization, Oho, Tsukuba, Ibaraki, 305-0801, Japan.
⁴ School of Physics, University of Bristol, H. H. Wills Physics Laboratory, Tyndall Avenue, Bristol, BS8 1TL, UK.
⁵ Department of Applied Physics, Geballe Laboratory for Advanced Materials, Stanford University, 476 Lomita Mall, Stanford University, Stanford, CA, 94305, USA.

PMID: 26502952
DOI: 10.1002/adma.201503339

Abstract

The Schottky barrier heights at the Pt/TiO2 (001) junctions are modulated over 0.8 eV by inserting <1 nm of LaAlO3. The large electric field in the LaAlO3 is stabilized by preserving the continuity of in-plane lattice symmetry at the oxide interface. These results greatly expand the application of dipole engineering to versatile polycrystalline metal/binary oxide functional interfaces.

Keywords: LaAlO3; TiO2; band alignments; interface dipoles; transition metal oxides.