In Situ Tuning of Switching Window in a Gate-Controlled Bilayer Graphene-Electrode Resistive Memory Device

He Tian; Haiming Zhao; Xue-Feng Wang; Qian-Yi Xie; Hong-Yu Chen; Mohammad Ali Mohammad; Cheng Li; Wen-Tian Mi; Zhi Bie; Chao-Hui Yeh; Yi Yang; H-S Philip Wong; Po-Wen Chiu; Tian-Ling Ren

doi:10.1002/adma.201503125

In Situ Tuning of Switching Window in a Gate-Controlled Bilayer Graphene-Electrode Resistive Memory Device

Adv Mater. 2015 Dec 16;27(47):7767-74. doi: 10.1002/adma.201503125. Epub 2015 Oct 26.

Authors

Affiliations

¹ Institute of Microelectronics and Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing, 100084, China.
² Department of Electrical Engineering and Stanford System X Alliance, Stanford University, Stanford, CA, 94305, USA.
³ Department of Electrical Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan.

PMID: 26500160
DOI: 10.1002/adma.201503125

Abstract

A resistive random access memory (RRAM) device with a tunable switching window is demonstrated for the first time. The SET voltage can be continuously tuned from 0.27 to 4.5 V by electrical gating from -10 to +35 V. The gate-controlled bilayer graphene-electrode RRAM can function as 1D1R and potentially increase the RRAM density.

Keywords: bilayer graphene; gate controlled; in situ; resistive memory; switching windows.