Shubnikov-de Haas oscillations were studied under high magnetic field in Bi2Se3 nanostructures grown by chemical vapor transport, for different bulk carrier densities ranging from 3 × 10(19) cm(-3) to 6 × 10(17) cm(-3). The contribution of topological surface states to electrical transport can be identified and separated from bulk carriers and massive two-dimensional electron gas. Band bending is investigated, and a crossover from upward to downward band bending is found at low bulk density as a result of a competition between bulk and interface doping. These results highlight the need to control electrical doping both in the bulk and at interfaces in order to study only topological surface states.
Keywords: Shubnikov-de Haas oscillations; band bending; bismuth selenide; chemical vapor transport; topological insulators.