Optoelectronic Properties of MAPbI3 Perovskite/Titanium Dioxide Heterostructures on Porous Silicon Substrates for Cyan Sensor Applications

Lung-Chien Chen; Chiao-Yu Weng

doi:10.1186/s11671-015-1114-x

Optoelectronic Properties of MAPbI3 Perovskite/Titanium Dioxide Heterostructures on Porous Silicon Substrates for Cyan Sensor Applications

Nanoscale Res Lett. 2015 Dec;10(1):404. doi: 10.1186/s11671-015-1114-x. Epub 2015 Oct 16.

Authors

Lung-Chien Chen¹, Chiao-Yu Weng²

Affiliations

¹ Department of Electro-optical Engineering, National Taipei University of Technology, 1, sec.3, Chung-Hsiao E. Rd., Taipei, 106, Taiwan. ocean@ntut.edu.tw.
² Department of Electro-optical Engineering, National Taipei University of Technology, 1, sec.3, Chung-Hsiao E. Rd., Taipei, 106, Taiwan.

Abstract

This work elucidates the optoelectronic properties of graphene/methylammonium lead iodide (MAPbI3)/titanium dioxide (TiO2)/porous Si heterostructure diodes. The porous silicon substrates can accommodate more MAPbI3/TiO2 than the polished silicon substrate such that the MAPbI3/TiO2/porous Si substrate heterostructures have better optoelectronic properties. Photocurrents from 300 to 900 nm were measured. The photocurrent is high in two ranges of wavelength, which are 300-460 nm and 520-800 nm. The photocurrent plateau covers all visible light (360 to 780 nm) except for cyan between 460 and 520 nm. Therefore, the graphene/MAPbI3/TiO2/porous Si heterostructure can be utilized as cyan sensors.

Keywords: Cyan sensors; Perovskite; Porous silicon; TiO2.