The Silicon:Colloidal Quantum Dot Heterojunction

Silvia Masala; Valerio Adinolfi; Jon-Paul Sun; Silvano Del Gobbo; Oleksandr Voznyy; Illan J Kramer; Ian G Hill; Edward H Sargent

doi:10.1002/adma.201503212

The Silicon:Colloidal Quantum Dot Heterojunction

Adv Mater. 2015 Dec 2;27(45):7445-50. doi: 10.1002/adma.201503212. Epub 2015 Oct 13.

Authors

Silvia Masala¹, Valerio Adinolfi², Jon-Paul Sun³, Silvano Del Gobbo¹, Oleksandr Voznyy², Illan J Kramer², Ian G Hill³, Edward H Sargent²

Affiliations

¹ Division of Physical Sciences and Engineering, Solar and Photovoltaics Engineering Research Center, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia.
² Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada.
³ Department of Physics and Atmospheric Science, Dalhousie University, 1459, Oxford Street, Halifax, Nova Scotia, B3H 4R2, Canada.

PMID: 26460732
DOI: 10.1002/adma.201503212

Abstract

A heterojunction between crystalline silicon and colloidal quantum dots (CQDs) is realized. A special interface modification is developed to overcome an inherent energetic band mismatch between the two semiconductors, and realize the efficient collection of infrared photocarriers generated in the CQD film. This junction is used to produce a sensitive near infrared photodetector.

Keywords: PbS; colloidal quantum dots; heterostructures; infrared; photodectors.