Graphene-Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaOx Based Memristive Devices

Michael Lübben; Panagiotis Karakolis; Vassilios Ioannou-Sougleridis; Pascal Normand; Panagiotis Dimitrakis; Ilia Valov

doi:10.1002/adma.201502574

Graphene-Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaOx Based Memristive Devices

Adv Mater. 2015 Oct 28;27(40):6202-7. doi: 10.1002/adma.201502574. Epub 2015 Sep 10.

Authors

Michael Lübben¹, Panagiotis Karakolis², Vassilios Ioannou-Sougleridis², Pascal Normand², Panagiotis Dimitrakis², Ilia Valov¹

Affiliations

¹ Peter Grünberg Institute (Electronic Materials - PGI-7), Forschungszentrum Jülich, 52425, Jülich, Germany.
² Institute of Nanoscience and Nanotechnology, NCSR Demokritos, 15310, Athens, Greece.

PMID: 26456484
DOI: 10.1002/adma.201502574

Abstract

By modification of the electrode-solid-electrolyte interface with graphene, transit from valence change memories (VCM) to electrochemical metallization memories (ECM) in the cell Ta(C)/Ta2 O5 /Pt is demonstrated, thus, bridging both mechanisms. The ECM operation is discussed in the light of Ta-cation mobility in TaOx . The crucial role of electrochemical processes and moisture in the resistive switching process is also highlighted.

Keywords: electrochemical metallization memories; graphene; interfaces; redox-based resistive switching memories (ReRAM); valence change memories.