Tuning the Tunneling Rate and Dielectric Response of SAM-Based Junctions via a Single Polarizable Atom

Dandan Wang; Davide Fracasso; Argo Nurbawono; Harshini V Annadata; C S Suchand Sangeeth; Li Yuan; Christian A Nijhuis

doi:10.1002/adma.201502968

Tuning the Tunneling Rate and Dielectric Response of SAM-Based Junctions via a Single Polarizable Atom

Adv Mater. 2015 Nov;27(42):6689-95. doi: 10.1002/adma.201502968. Epub 2015 Sep 28.

Authors

Dandan Wang^{1

2}, Davide Fracasso^{1

2}, Argo Nurbawono³, Harshini V Annadata^{1

2}, C S Suchand Sangeeth^{1

2}, Li Yuan^{1

2}, Christian A Nijhuis^{1

2}

Affiliations

¹ Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, 117543, Singapore.
² Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, Singapore, 117546, Singapore.
³ Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore, 117551, Singapore.

PMID: 26414779
DOI: 10.1002/adma.201502968

Abstract

The dielectric response and electrical properties of junctions based on self-assembled monolayers (SAMs) of the form S(CH2)11X can be controlled by changing the polarizability of X (here X = H, F, Cl, Br, or I). A 1000-fold increase in the tunneling rate and a four-fold increase of the dielectric constant (ε r ) with increasing polarizability of X are found.

Keywords: EGaIn; dielectric response; molecular electronics; self-assembled monolayers; tunneling junctions.