Lateral Built-In Potential of Monolayer MoS2-WS2 In-Plane Heterostructures by a Shortcut Growth Strategy

Kun Chen; Xi Wan; Weiguang Xie; Jinxiu Wen; Zhiwen Kang; Xiaoliang Zeng; Huanjun Chen; Jianbin Xu

doi:10.1002/adma.201502375

Lateral Built-In Potential of Monolayer MoS2-WS2 In-Plane Heterostructures by a Shortcut Growth Strategy

Adv Mater. 2015 Nov 4;27(41):6431-7. doi: 10.1002/adma.201502375. Epub 2015 Sep 23.

Authors

Kun Chen¹, Xi Wan¹, Weiguang Xie², Jinxiu Wen³, Zhiwen Kang¹, Xiaoliang Zeng⁴, Huanjun Chen³, Jianbin Xu¹

Affiliations

¹ Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, 999077, P. R. China.
² Siyuan Laboratory, Department of Physics, Jinan University, Guangzhou, Guangdong, 510632, China.
³ State Key Laboratory of Optoelectronic Materials and Technologies and Guangdong Province Key Laboratory of Display Material and Technology, School of Physics and Engineering, Sun Yat-sen University, Guangzhou, 510275, China.
⁴ Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China.

PMID: 26398227
DOI: 10.1002/adma.201502375

Abstract

Lateral WS2-MoS2 heterostructures are synthesized by a shortcut one-step growth recipe with low-cost and soluble salts. The 2D spatial distributions of the built-in potential and the related electric field of the lateral WS2-MoS2 heterostructure are quantitatively analyzed by scanning Kelvin probe force microscopy revealing the fundamental attributes of the lateral heterostructure devices.

Keywords: SKPFM; built-in electric fields; built-in potential; depletion-layer width; heterostructures.