Graphene Nucleation Preferentially at Oxygen-Rich Cu Sites Rather Than on Pure Cu Surface

Tao Liang; Guangyu He; Guowei Huang; Yuhan Kong; Weifei Fu; Hongzheng Chen; Qi Wang; Hideo Iwai; Daisuke Fujita; Yingchun Liu; Mingsheng Xu

doi:10.1002/adma.201501473

Graphene Nucleation Preferentially at Oxygen-Rich Cu Sites Rather Than on Pure Cu Surface

Adv Mater. 2015 Nov 4;27(41):6404-10. doi: 10.1002/adma.201501473. Epub 2015 Sep 23.

Authors

Affiliations

¹ State Key Laboratory of Silicon Materials Department of Polymer Science and Engineering, Zhejiang University, Hangzhou, 310027, P. R. China.
² Department of Chemistry, Zhejiang University, Hangzhou, 310027, P. R. China.
³ Surface and Microbeam Analysis, Materials Analysis Station, National Institute for Materials Science, Tsukuba, 305-0047, Japan.
⁴ Nano Characterization Unit, National Institute for Materials Science, Tsukuba, 305-0047, Japan.

PMID: 26397823
DOI: 10.1002/adma.201501473

Abstract

Graphene nucleation at oxygen-rich Cu sites instead of on the commonly assumed pure Cu surface is discovered using high-spatial-resolution scanning Auger electron microscopy, which reveals a strong O signal existing underneath the graphene seeds, along with density functional theory calculations.

Keywords: chemical vapor deposition; copper; density functional theory calculations; graphene; oxygen.