Herein we report on a nearly ideal Schottky diode device fabricated from Cu(2-x)Se nanoparticles synthesized using the microwave digestive method. The thermionic theory using data extracted from the experimental I-V curve resulted in the ideality factor of 4.35 and the barrier height of 0.895 eV whilst the Cheung's method resulted in the ideality factor, barrier height and series resistance of 1.04, 0.00259 eV and 0.870 Ω respectively. The Cheung's method is thought to be the most accurate as it takes into account the series resistance. The obtained values therefore are indicative of good diode behaviour of the device and this is a highly sought after goal in all electronic materials development.