Stacked 3D RRAM Array with Graphene/CNT as Edge Electrodes

Yue Bai; Huaqiang Wu; Kun Wang; Riga Wu; Lin Song; Tianyi Li; Jiangtao Wang; Zhiping Yu; He Qian

doi:10.1038/srep13785

Stacked 3D RRAM Array with Graphene/CNT as Edge Electrodes

Sci Rep. 2015 Sep 8:5:13785. doi: 10.1038/srep13785.

Authors

Yue Bai¹, Huaqiang Wu^{1

2}, Kun Wang¹, Riga Wu³, Lin Song¹, Tianyi Li⁴, Jiangtao Wang⁴, Zhiping Yu^{1

2}, He Qian^{1

2}

Affiliations

¹ Institute of Microelectronics, Tsinghua University, Beijing, China, 100084.
² Tsinghua National Laboratory for Information Science and Technology (TNList), Beijing, China, 100084.
³ Inner Mongolia University, Hohhot, Inner Mongolia, China, 010021.
⁴ State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, China.

Abstract

There are two critical challenges which determine the array density of 3D RRAM: 1) the scaling limit in both horizontal and vertical directions; 2) the integration of selector devices in 3D structure. In this work, we present a novel 3D RRAM structure using low-dimensional materials, including 2D graphene and 1D carbon nanotube (CNT), as the edge electrodes. A two-layer 3D RRAM with monolayer graphene as edge electrode is demonstrated. The electrical results reveal that the RRAM devices could switch normally with this very thin edge electrode at nanometer scale. Meanwhile, benefited from the asymmetric carrier transport induced by Schottky barrier at metal/CNT and oxide/CNT interfaces, a selector built-in 3D RRAM structure using CNT as edge electrode is successfully fabricated and characterized. Furthermore, the discussion of high array density potential is presented.

Publication types

Research Support, Non-U.S. Gov't