Macroscale Transformation Optics Enabled by Photoelectrochemical Etching

David S Barth; Christopher Gladden; Alessandro Salandrino; Kevin O'Brien; Ziliang Ye; Michael Mrejen; Yuan Wang; Xiang Zhang

doi:10.1002/adma.201502322

Macroscale Transformation Optics Enabled by Photoelectrochemical Etching

Adv Mater. 2015 Oct 28;27(40):6131-6. doi: 10.1002/adma.201502322. Epub 2015 Sep 1.

Authors

David S Barth¹, Christopher Gladden¹, Alessandro Salandrino¹, Kevin O'Brien¹, Ziliang Ye¹, Michael Mrejen¹, Yuan Wang¹, Xiang Zhang^{1

2

3

4}

Affiliations

¹ NSF Nano-scale Science and Engineering Center (NSEC), University of California Berkeley, Berkeley, CA, 94720, USA.
² Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
³ Kavli Energy NanoSciences Institute at the University of California Berkeley and the Lawrence Berkeley National Laboratory, Berkeley, California, 94720, USA.
⁴ Department of Physics, King Abdulaziz University, Jeddah, 21589, Saudi Arabia.

PMID: 26332896
DOI: 10.1002/adma.201502322

Abstract

Photoelectrochemical etching of silicon can be used to form lateral refractive index gradients for transformation optical devices. This technique allows the fabrication of macroscale devices with large refractive index gradients. Patterned porous layers can also be lifted from the substrate and transferred to other materials, creating more possibilities for novel devices.

Keywords: gradient index optics; porous silicon; transformation optics, photochemical etching.