Inorganic Hole Conducting Layers for Perovskite-Based Solar Cells

Anand S Subbiah; Ansuman Halder; Soham Ghosh; Neha Mahuli; Gary Hodes; Shaibal K Sarkar

doi:10.1021/jz500645n

Inorganic Hole Conducting Layers for Perovskite-Based Solar Cells

J Phys Chem Lett. 2014 May 15;5(10):1748-53. doi: 10.1021/jz500645n. Epub 2014 May 7.

Authors

Anand S Subbiah, Ansuman Halder, Soham Ghosh, Neha Mahuli, Gary Hodes¹, Shaibal K Sarkar

Affiliation

¹ §Department of Materials and Interface, Weizmann Institute of Science, 76100 Rehovot, Israel.

PMID: 26270378
DOI: 10.1021/jz500645n

Abstract

Hybrid organic-inorganic semiconducting perovskite photovoltaic cells are usually coupled with organic hole conductors. Here, we report planar, inverse CH3NH3PbI3-xClx-based cells with inorganic hole conductors. Using electrodeposited NiO as hole conductor, we have achieved a power conversion efficiency of 7.3%. The maximum VOC obtained was 935 mV with an average VOC value being 785 mV. Preliminary results for similar cells using electrodeposited CuSCN as hole conductor resulted in devices up to 3.8% in efficiency. The ability to obtain promising cells using NiO and CuSCN expands the presently rather limited range of available hole conductors for perovskite cells.

Keywords: CuSCN; Inorganic hole conductor; NiO; Perovskite solar cell.