Oxygen vacancies (V(O)) in oxides are extensively used to manipulate vital material properties. Although methods to predict defect formation energies have advanced significantly, an understanding of the intrinsic material properties that govern defect energetics lags. We use first-principles calculations to study the connection between intrinsic (bulk) material properties and the energy to form a single, charge neutral oxygen vacancy (E(V)). We investigate 45 binary and ternary oxides and find that a simple model which combines (i) the oxide enthalpy of formation (ΔH(f)), (ii) the midgap energy relative to the O 2p band center (E(O 2p) + (1/2)E(g)), and (iii) atomic electronegativities reproduces calculated E(V) within ∼0.2 eV. This result provides both valuable insights into the key properties influencing E(V) and a direct method to predict E(V). We then predict the E(V) of ∼1800 oxides and validate the predictive nature of our approach against direct defect calculations for a subset of 18 randomly selected materials.
Keywords: High-throughput; Materials genome; Point defects; Rapid screening.