High-Performance Monolayer WS2 Field-Effect Transistors on High-κ Dielectrics

Yang Cui; Run Xin; Zhihao Yu; Yiming Pan; Zhun-Yong Ong; Xiaoxu Wei; Junzhuan Wang; Haiyan Nan; Zhenhua Ni; Yun Wu; Tangsheng Chen; Yi Shi; Baigeng Wang; Gang Zhang; Yong-Wei Zhang; Xinran Wang

doi:10.1002/adma.201502222

High-Performance Monolayer WS2 Field-Effect Transistors on High-κ Dielectrics

Adv Mater. 2015 Sep 16;27(35):5230-4. doi: 10.1002/adma.201502222. Epub 2015 Aug 10.

Authors

Yang Cui¹, Run Xin¹, Zhihao Yu¹, Yiming Pan², Zhun-Yong Ong³, Xiaoxu Wei¹, Junzhuan Wang¹, Haiyan Nan⁴, Zhenhua Ni⁴, Yun Wu⁵, Tangsheng Chen⁵, Yi Shi¹, Baigeng Wang², Gang Zhang³, Yong-Wei Zhang³, Xinran Wang¹

Affiliations

¹ National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China.
² National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, 210093, P. R. China.
³ Institute of High Performance Computing, 1 Fusionopolis Way, 138632, Singapore.
⁴ Department of Physics, Southeast University, Nanjing, 211189, China.
⁵ Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Device Institute, Nanjing, 210017, China.

PMID: 26255894
DOI: 10.1002/adma.201502222

Abstract

The combination of high-quality Al2 O3 dielectric and thiol chemistry passivation can effectively reduce the density of interface traps and Coulomb impurities, leading to a significant improvement of the mobility and a transition of the charge transport from the insulating to the metallic regime. A record high mobility of 83 cm(2) V(-1) s(-1) (337 cm(2) V(-1) s(-1) ) is reached at room temperature (low temperature) for monolayer WS2 . A theoretical model for electron transport is also developed.

Keywords: interfaces; mobility; transition metal dichalcogenides; tungsten disulfide (WS2).