Bias assisted scanning probe microscopy direct write lithography enables local oxygen enrichment of lanthanum cuprates thin films

Francesco Lavini; Nan Yang; Rama K Vasudevan; E Strelcov; S Jesse; M B Okatan; I Kravchenko; Daniele Di Castro; Sergei V Kalinin; Giuseppe Balestrino; Carmela Aruta; Vittorio Foglietti

doi:10.1088/0957-4484/26/32/325302

Bias assisted scanning probe microscopy direct write lithography enables local oxygen enrichment of lanthanum cuprates thin films

Nanotechnology. 2015 Aug 14;26(32):325302. doi: 10.1088/0957-4484/26/32/325302. Epub 2015 Jul 24.

Authors

Francesco Lavini¹, Nan Yang, Rama K Vasudevan, E Strelcov, S Jesse, M B Okatan, I Kravchenko, Daniele Di Castro, Sergei V Kalinin, Giuseppe Balestrino, Carmela Aruta, Vittorio Foglietti

Affiliation

¹ National Research Council CNR-SPIN, University of Roma 'Tor Vergata', Rome I-00133, Italy. NAST Center, University of Roma 'Tor Vergata', Rome I-00133, Italy.

PMID: 26207015
DOI: 10.1088/0957-4484/26/32/325302

Abstract

Scanning probe bias techniques have been used as a method to locally dope thin epitaxial films of La(2)CuO(4) (LCO) fabricated by pulsed laser deposition. The local electrochemical oxidation of LCO very efficiently introduces interstitial oxygen defects in the thin film. Details on the influence of the tip voltage bias and environmental conditions on the surface morphology have been investigated. The results show that a local uptake of oxygen occurs in the oxidized films.

Publication types

Research Support, Non-U.S. Gov't