Trap Engineering of CdTe Nanoparticle for High Gain, Fast Response, and Low Noise P3HT:CdTe Nanocomposite Photodetectors

Haotong Wei; Yanjun Fang; Yongbo Yuan; Liang Shen; Jinsong Huang

doi:10.1002/adma.201502292

Trap Engineering of CdTe Nanoparticle for High Gain, Fast Response, and Low Noise P3HT:CdTe Nanocomposite Photodetectors

Adv Mater. 2015 Sep 9;27(34):4975-81. doi: 10.1002/adma.201502292. Epub 2015 Jul 20.

Authors

Haotong Wei¹, Yanjun Fang¹, Yongbo Yuan¹, Liang Shen¹, Jinsong Huang¹

Affiliation

¹ Department of Mechanical and Materials Engineering, University of Nebraska-Lincoln Lincoln, NE, 68588, USA.

PMID: 26192923
DOI: 10.1002/adma.201502292

Abstract

Cd(2+) causes deep traps on the surface of CdTe quantum dots (QDs) often leading to a long response time for a photodetector. Poly(3-hexylthiophene) (P3HT) can be used to selectively passivate the Cd(2+) -related deep traps by forming a Cd-S bond, while maintaining the shallow traps. By tailoring the trap depth of the CdTe QDs, a high gain, fast response, and low noise P3HT:CdTe nanocomposite photodetector is achieved.

Keywords: noise; photoconductive gain; photodetectors; response speed; trap passivation.