Mechanically Durable and Highly Stretchable Transistors Employing Carbon Nanotube Semiconductor and Electrodes

Alex Chortos; Ghada I Koleilat; Raphael Pfattner; Desheng Kong; Pei Lin; Roda Nur; Ting Lei; Huiliang Wang; Nan Liu; Ying-Chih Lai; Myung-Gil Kim; Jong Won Chung; Sangyoon Lee; Zhenan Bao

doi:10.1002/adma.201501828

Mechanically Durable and Highly Stretchable Transistors Employing Carbon Nanotube Semiconductor and Electrodes

Adv Mater. 2016 Jun;28(22):4441-8. doi: 10.1002/adma.201501828. Epub 2015 Jul 14.

Authors

Alex Chortos¹, Ghada I Koleilat², Raphael Pfattner², Desheng Kong², Pei Lin³, Roda Nur⁴, Ting Lei², Huiliang Wang¹, Nan Liu², Ying-Chih Lai^{2

5}, Myung-Gil Kim^{2

6}, Jong Won Chung^{2

7}, Sangyoon Lee⁷, Zhenan Bao²

Affiliations

¹ Materials Science and Engineering Department, Stanford University, 496 Lomita Mall, Stanford, CA, 94305-4034, USA.
² Chemical Engineering Department, Stanford University, 443 Via Ortega, Stanford, CA, 94305, USA.
³ Materials Physics and Chemistry, University of Science and Technology, Beijing, Haidian, Beijing, 100083, P. R. China.
⁴ Electrical Engineering Department, Stanford University, 350 Serra Mall, Stanford, CA, 94305, USA.
⁵ Department of Physics, National Taiwan University, Taipei, 10617, Taiwan, P. R. China.
⁶ Department of Chemistry, Chung-Ang University, 221 Heukseok-dong, Dongjak-gu, Seoul, 156-756, South Korea.
⁷ Samsung Advanced Institute of Technology, Yeongtong-gu, Suwon-si, Gyeonggi-do, 443-803, South Korea.

PMID: 26179120
DOI: 10.1002/adma.201501828

Abstract

Mechanically durable stretchable trans-istors are fabricated using carbon nanotube electrical components and tough thermoplastic elastomers. After an initial conditioning step, the electrical characteristics remain constant with strain. The strain-dependent characteristics are similar in orthogonal stretching directions. Devices can be impacted with a hammer and punctured with a needle while remaining functional and stretchable.

Keywords: carbon nanotubes; stretchable electronics; stretchable transistor.

Publication types

Research Support, Non-U.S. Gov't