High-performance, mechanically flexible, and vertically integrated 3D carbon nanotube and InGaZnO complementary circuits with a temperature sensor

Wataru Honda; Shingo Harada; Shohei Ishida; Takayuki Arie; Seiji Akita; Kuniharu Takei

doi:10.1002/adma.201502116

High-performance, mechanically flexible, and vertically integrated 3D carbon nanotube and InGaZnO complementary circuits with a temperature sensor

Adv Mater. 2015 Aug 26;27(32):4674-80. doi: 10.1002/adma.201502116. Epub 2015 Jul 14.

Authors

Wataru Honda¹, Shingo Harada¹, Shohei Ishida¹, Takayuki Arie¹, Seiji Akita¹, Kuniharu Takei¹

Affiliation

¹ Department of Physics and Electronics, Osaka Prefecture University, 1-1 Gakuen-cho, Naka-ku, Sakai, Osaka, 599-8531, Japan.

PMID: 26177598
DOI: 10.1002/adma.201502116

Abstract

A vertically integrated inorganic-based flexible complementary metal-oxide-semiconductor (CMOS) inverter with a temperature sensor with a high inverter gain of ≈50 and a low power consumption of <7 nW mm(-1) is demonstrated using a layer-by-layer assembly process. In addition, the negligible influence of the mechanical flexibility on the performance of the CMOS inverter and the temperature dependence of the CMOS inverter characteristics are discussed.

Keywords: 3D flexible complementary metal-oxide-semiconductors; InGaZnO; carbon nanotubes; temperature sensors; vertical integrations.