Bistable electrical switching and nonvolatile memory effect in carbon nanotube-poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) composite films

Yanmei Sun; Lei Li; Dianzhong Wen; Xuduo Bai; Gang Li

doi:10.1039/c5cp02164b

Bistable electrical switching and nonvolatile memory effect in carbon nanotube-poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) composite films

Phys Chem Chem Phys. 2015 Jul 14;17(26):17150-8. doi: 10.1039/c5cp02164b.

Authors

Yanmei Sun¹, Lei Li, Dianzhong Wen, Xuduo Bai, Gang Li

Affiliation

¹ HLJ Province Key Laboratories of Senior-education for Electronic Engineering, Heilongjiang University, Harbin, 150080, China. wendianzhong@hlju.edu.cn.

PMID: 26067910
DOI: 10.1039/c5cp02164b

Abstract

The electrical conductance switching behavior and nonvolatile memory effects in poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)

Pedot: PSS and single-wall carbon nanotubes (SWCNTs) composite thin films have been investigated. The effect of doping level on electrical conductance switching behavior of an indium tin oxide/

Pedot: PSS + SWCNTs/aluminum (ITO/PEDOT:PSS + SWCNTs/Al) sandwich structure has been reported. The ITO/(PEDOT:PSS + SWCNTs)/Al devices show current bistability. Moreover, the ON/OFF state current ratio is in an extent of 10(2)-10(4). The OFF state current increased with the decreasing SWCNTs content in the composite film, and the ON/OFF state current ratio of the device increases with the increase in SWCNTs content of the composite film. Thus, by varying the doping level of SWCNTs in

Pedot: PSS composite thin films, the electrical conductance switching behavior of ITO/PEDOT:PSS + SWCNTs/Al can be modulated in a controlled manner.