A sputtered CdS buffer layer for co-electrodeposited Cu2ZnSnS4 solar cells with 6.6% efficiency

Jiahua Tao; Kezhi Zhang; Chuanjun Zhang; Leilei Chen; Huiyi Cao; Junfeng Liu; Jinchun Jiang; Lin Sun; Pingxiong Yang; Junhao Chu

doi:10.1039/c5cc01170a

A sputtered CdS buffer layer for co-electrodeposited Cu2ZnSnS4 solar cells with 6.6% efficiency

Chem Commun (Camb). 2015 Jun 28;51(51):10337-40. doi: 10.1039/c5cc01170a.

Authors

Jiahua Tao¹, Kezhi Zhang, Chuanjun Zhang, Leilei Chen, Huiyi Cao, Junfeng Liu, Jinchun Jiang, Lin Sun, Pingxiong Yang, Junhao Chu

Affiliation

¹ Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241, China. lsun@ee.ecnu.edu.cn.

PMID: 26027699
DOI: 10.1039/c5cc01170a

Abstract

Cu2ZnSnS4 thin films with thicknesses ranging from 0.35 to 1.85 μm and micron-sized grains (0.5-1.5 μm) were synthesized using co-electrodeposited Cu-Zn-Sn-S precursors with different deposition times. Here we have introduced a sputtered CdS buffer layer for the development of CZTS solar cells for the first time, which enables breakthrough efficiencies up to 6.6%.