Development of micro-four-point probe in a scanning tunneling microscope for in situ electrical transport measurement

Jian-Feng Ge; Zhi-Long Liu; Chun-Lei Gao; Dong Qian; Canhua Liu; Jin-Feng Jia

doi:10.1063/1.4919766

Development of micro-four-point probe in a scanning tunneling microscope for in situ electrical transport measurement

Rev Sci Instrum. 2015 May;86(5):053903. doi: 10.1063/1.4919766.

Authors

Jian-Feng Ge¹, Zhi-Long Liu¹, Chun-Lei Gao¹, Dong Qian¹, Canhua Liu¹, Jin-Feng Jia¹

Affiliation

¹ Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240, China.

PMID: 26026532
DOI: 10.1063/1.4919766

Abstract

Electrons at surface may behave differently from those in bulk of a material. Multi-functional tools are essential in comprehensive studies on a crystal surface. Here, we developed an in situ microscopic four-point probe (4PP) transport measurement system on the basis of a scanning tunneling microscope (STM). In particular, convenient replacement between STM tips and micro-4PPs enables systematic investigations of surface morphology, electronic structure, and electrical transport property of a same sample surface. Performances of the instrument are demonstrated with high-quality STM images, tunneling spectra, and low-noise electrical I-V characteristic curves of a single-layer FeSe film grown on a conductive SrTiO3 surface.