Low-Dimensional Structure Vacuum-Ultraviolet-Sensitive (λ < 200 nm) Photodetector with Fast-Response Speed Based on High-Quality AlN Micro/Nanowire

Wei Zheng; Feng Huang; Ruisheng Zheng; Honglei Wu

doi:10.1002/adma.201500268

Low-Dimensional Structure Vacuum-Ultraviolet-Sensitive (λ < 200 nm) Photodetector with Fast-Response Speed Based on High-Quality AlN Micro/Nanowire

Adv Mater. 2015 Jul 8;27(26):3921-7. doi: 10.1002/adma.201500268. Epub 2015 May 27.

Authors

Wei Zheng¹, Feng Huang¹, Ruisheng Zheng², Honglei Wu²

Affiliations

¹ State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou, 510275, P. R. China.
² Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Institute of Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China.

PMID: 26016601
DOI: 10.1002/adma.201500268

Abstract

A low-dimensional-structure vacuum-ultraviolet-sensitive photodetector based on high-quality aluminum nitride (AlN) micro-/nanowires is reported. This work, for the first time, demonstrates that a semiconductor nanostructure can be applied in vacuum-ultraviolet (VUV) photon detection and opens a way for developing diminutive, power-saving, and low-cost VUV materials and sensors that can be potentially applied in geospace sciences and solar-terrestrial physics.

Keywords: AlN micro/nanowire; fast responses; low-dimensional photodetectors; vacuum-ultraviolet detection.