Rotation-misfit-free heteroepitaxial stacking and stitching growth of hexagonal transition-metal dichalcogenide monolayers by nucleation kinetics controls

Hoseok Heo; Ji Ho Sung; Gangtae Jin; Ji-Hoon Ahn; Kyungwook Kim; Myoung-Jae Lee; Soonyoung Cha; Hyunyong Choi; Moon-Ho Jo

doi:10.1002/adma.201500846

Rotation-misfit-free heteroepitaxial stacking and stitching growth of hexagonal transition-metal dichalcogenide monolayers by nucleation kinetics controls

Adv Mater. 2015 Jul 1;27(25):3803-10. doi: 10.1002/adma.201500846. Epub 2015 May 22.

Authors

Hoseok Heo^{1

2}, Ji Ho Sung^{1

2}, Gangtae Jin^{1

3}, Ji-Hoon Ahn¹, Kyungwook Kim^{1

3}, Myoung-Jae Lee¹, Soonyoung Cha⁴, Hyunyong Choi⁴, Moon-Ho Jo^{1

2

3}

Affiliations

¹ Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), 77 Cheongam-Ro, Pohang, 790-784, Korea.
² Division of Advanced Materials Science, Pohang University of Science and Technology (POSTECH), 77 Cheongam-Ro, Pohang, 790-784, Korea.
³ Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-Ro, Pohang, 790-784, Korea.
⁴ School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 120-749, Korea.

PMID: 26011695
DOI: 10.1002/adma.201500846

Abstract

2D vertical stacking and lateral stitching growth of monolayer (ML) hexagonal transition-metal dichalcogenides are reported. The 2D heteroepitaxial manipulation of MoS2 and WS2 MLs is achieved by control of the 2D nucleation kinetics during the sequential vapor-phase growth. It enables the creation of hexagon-on-hexagon unit-cell stacking and hexagon-by-hexagon stitching without interlayer rotation misfits.

Keywords: 2D materials; heterostructures; hexagonal transition-metal dichalcogenides; monolayer semiconductors; superlattices.