Electrostatically Reversible Polarity of Ambipolar α-MoTe2 Transistors

Shu Nakaharai; Mahito Yamamoto; Keiji Ueno; Yen-Fu Lin; Song-Lin Li; Kazuhito Tsukagoshi

doi:10.1021/acsnano.5b00736

Electrostatically Reversible Polarity of Ambipolar α-MoTe2 Transistors

ACS Nano. 2015 Jun 23;9(6):5976-83. doi: 10.1021/acsnano.5b00736. Epub 2015 Jun 2.

Authors

Shu Nakaharai¹, Mahito Yamamoto¹, Keiji Ueno², Yen-Fu Lin^{1

3}, Song-Lin Li¹, Kazuhito Tsukagoshi¹

Affiliations

¹ †WPI Center for Materials Nanoarchitechtonics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan.
² ‡Department of Chemistry, Graduate School of Science and Engineering, Saitama University, Saitama 338-8570, Japan.
³ §Department of Physics, National Chung Hsing University, Taichung 40227, Taiwan.

PMID: 25988597
DOI: 10.1021/acsnano.5b00736

Abstract

A doping-free transistor made of ambipolar α-phase molybdenum ditelluride (α-MoTe2) is proposed in which the transistor polarity (p-type and n-type) is electrostatically controlled by dual top gates. The voltage signal in one of the gates determines the transistor polarity, while the other gate modulates the drain current. We demonstrate the transistor operation experimentally, with electrostatically controlled polarity of both p- and n-type in a single transistor.

Keywords: ambipolar; field-effect transistor; molybdenum ditelluride; polarity control; transition metal dichalcogenide.

Publication types

Research Support, Non-U.S. Gov't