Study of Ga incorporation in glassy arsenic selenides by high-resolution XPS and EXAFS

R Golovchak; Ya Shpotyuk; V Nazabal; C Boussard-Pledel; B Bureau; J Cebulski; H Jain

doi:10.1063/1.4919947

Study of Ga incorporation in glassy arsenic selenides by high-resolution XPS and EXAFS

J Chem Phys. 2015 May 14;142(18):184501. doi: 10.1063/1.4919947.

Authors

R Golovchak¹, Ya Shpotyuk², V Nazabal², C Boussard-Pledel², B Bureau², J Cebulski³, H Jain⁴

Affiliations

¹ Department of Physics and Astronomy, Austin Peay State University, Clarksville, Tennessee 37044, USA.
² Equipe Verres et Céramiques UMR-CNRS 6226, Université de Rennes 1, 35042 Rennes Cedex, France.
³ Center for Microelectronics and Nanotechnology, University of Rzeszow, 1, Pigonia Str., 35-310 Rzeszow, Poland.
⁴ Department of Materials Science and Engineering, Lehigh University, 5 East Packer Avenue, Bethlehem, Pennsylvania 18015-3195, USA.

PMID: 25978894
DOI: 10.1063/1.4919947

Abstract

Effect of Ga addition on the structure of vitreous As2Se3 is studied using high-resolution X-ray photoelectron spectroscopy and extended X-ray absorption fine structure techniques. The "8-N" rule is shown to be violated for Ga atoms and, possibly, for certain number of As atoms. On the contrary, Se keeps its 2-fold coordination according to "8-N" rule in the amorphous phase throughout all the compositions. Crystalline inclusions appear in the amorphous structure of the investigated glasses at Ga concentrations greater than 3 at. %. These inclusions are presumably associated with Ga2Se3 crystallites and transition phases/defects formed at the boundaries of these crystallites and host amorphous matrix. The existence of Ga-As and Se-Se bonds in the samples with higher Ga content is supported by present studies.