Flexible Boron-Doped Laser-Induced Graphene Microsupercapacitors

ACS Nano. 2015 Jun 23;9(6):5868-75. doi: 10.1021/acsnano.5b00436. Epub 2015 May 19.

Abstract

Heteroatom-doped graphene materials have been intensely studied as active electrodes in energy storage devices. Here, we demonstrate that boron-doped porous graphene can be prepared in ambient air using a facile laser induction process from boric acid containing polyimide sheets. At the same time, active electrodes can be patterned for flexible microsupercapacitors. As a result of boron doping, the highest areal capacitance of as-prepared devices reaches 16.5 mF/cm(2), 3 times higher than nondoped devices, with concomitant energy density increases of 5-10 times at various power densities. The superb cyclability and mechanical flexibility of the device are well-maintained, showing great potential for future microelectronics made from this boron-doped laser-induced graphene material.

Keywords: boron-doped; energy storage; flexible; graphene; laser induction; microsupercapacitor; porous graphene.

Publication types

  • Research Support, Non-U.S. Gov't
  • Research Support, U.S. Gov't, Non-P.H.S.